BF1210,115 datasheet

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Маркировка

BF1210,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1210,115 Application: VHF/UHF Channel Mode: Enhancement Channel Type: N Configuration: Dual Continuous Drain Current: 30 mA Current - Test: 19mA Current Rating: 30mA Drain Source Voltage (max): 6V Drain-source Breakdown Voltage: 6 V Frequency: 400MHz Gain: 31dB Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949197 Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 0.9dB Noise Figure (max): 1.9dB Number Of Elements: 2 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF Package / Case: SC-70-6, SC-88, SOT-363 Package Type: SOT-363 Pin Count: 6 Power - Output: - Power Dissipation: 180 mW Power Dissipation (max): 180mW Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB Reverse Capacitance (typ): 0.02@5VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 6V Voltage - Test: 5V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 6 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 3000 Part # Aliases: BF1210 T/R Other Names: 934060847115, BF1210 T/R
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